发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make small a voltage variation, due to current dissipation of a first internal circuit in a semiconductor device of a first power supply voltage supplied externally, being applied on an internal voltage generating circuit driven by the first power supply voltage. CONSTITUTION:Bonding pads are provided on a chip by dividing them into two pairs, the first pair consisting of a first bonding pad 3 for a power supply voltage for supplying the first power supply voltage to a first internal circuit 8 of a semiconductor device and a first grounding bonding pad 5 and the second pair consisting of a bonding pad 4 for supplying the same first power supply voltage to the internal voltage generating circuit 7 and the second grounding bonding pad 6. Thereby, the bonding pads for supplying power supply voltage are provided individually for the first internal circuit for supplying the first power supply voltage and the internal voltage generating circuit in view of eliminating common wirings within the chip and mutual interference.
申请公布号 JPH0684996(A) 申请公布日期 1994.03.25
申请号 JP19920237951 申请日期 1992.09.07
申请人 NEC CORP 发明人 TSURUOKA YOSHITAKE
分类号 H01L21/60;H01L23/50 主分类号 H01L21/60
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