发明名称 High voltage driver circuit
摘要 A semiconductor switching circuit utilizes a relatively low breakdown voltage transistor for switching between a higher and a lower voltage by switching between a first conducting state of said transistor which is a "turned-on" state and a second state which is a "breakdown" state. The switching circuit is especially useful for the operation of display devices.
申请公布号 US4070600(A) 申请公布日期 1978.01.24
申请号 US19760753773 申请日期 1976.12.23
申请人 GENERAL ELECTRIC COMPANY 发明人 BUTLER, WALTER J.;EICHELBERGER, CHARLES W.
分类号 H03K5/02;(IPC1-7):H05B41/14;H03K17/60;H03K3/35 主分类号 H03K5/02
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