| 摘要 |
<p>The transistor structure is intended for high blocking voltage and has a collector region of a given conductivity. Adjacent to collector region is a base region of an opposite conductivity, within which is formed an emitter region of the collector conductivity. Each region has its own electrode, the emitter electrode bounding a part of the base region for short circuit purposes. The emitter region (24') has a number of through-perforation (27) distributed over its entire area. Into the perforations extends the base region (22) and contacts the emitter electrode (26) in the region of the perforations surface. The distribution of the perforations is uniform. Preferably the structure is of layered type.</p> |
