发明名称 Barrier height voltage reference
摘要 A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.
申请公布号 US4068134(A) 申请公布日期 1978.01.10
申请号 US19760674453 申请日期 1976.04.07
申请人 HEWLETT-PACKARD COMPANY 发明人 TOBEY, JR., MORLEY C.;GIULIANI, DAVID J.;ASHKIN, PETER B.
分类号 H01L27/04;G05F3/24;H01L21/822;H01L29/47;H01L29/78;(IPC1-7):H03K1/12;H03K3/35;H01L29/80;H01L27/02 主分类号 H01L27/04
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