| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To increase hFE and reduce power consumption by using PNP transistors for a vertical type as well as to achieve the higher density and higher hFE by using vertical PNP transistors in lieu of lateral PNP transistors of a low concentration and a wide base width. |
| 申请公布号 |
JPS52154386(A) |
申请公布日期 |
1977.12.22 |
| 申请号 |
JP19760071916 |
申请日期 |
1976.06.17 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FUJITA TSUTOMU;YAMADA HARUO;OGAWA HISATO |
| 分类号 |
H01L21/8222;H01L27/02;H01L27/06 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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