| 摘要 |
1495987 Depositing monatomic layers in sequence INSTRUMENTARIUM OY 17 Nov 1975 [29 Nov 1974] 47212/75 Heading C7F Compound films are grown from the gaseous phase by depositing the chemical elements A and B of the compound in sequence and one at a time in vacuo or inert gas, the vapour pressure of the elements and temperature of the substrate and/or interaction time being controlled so that except for atoms A or B bonded individually to atoms B or A respectively of the preceding layer, all atoms of the element being deposited remain in or return to the gaseous phase, whereby each layer is deposited as a monatomic layer only. Vapour deposition or sputtering may be used, the substrate being arranged on a rotating holder which rotates in turn over sources of respective elements; the substrate is hotter than the sources whereby unbound atoms are back-evaporated; suitable apparatus is described. The substrate may be glass, and the following coatings are exemplified: (1) ZnS produced from evaporated Zn and evaporated S (2) SnO 2 , produced by evaporating Sn and reacting with O 2 plasma and (3) GaP, produced by evaporating both components. |
