Transistor integrated circuit operating at HF - has specified N=type doping concn. in substrate and inverted collector providing rapid conduction

摘要

The rapid conduction integrated circuit includes a monocrystalline silicon semiconductor body (1). A substrate (2) with a doping concentrations NS.1014 atoms/cm3 and a buried layer (10) of thickness 0.5 micron, doping concentration P+101 atoms/cm3. An inverted collector (20) has thickness 1.5 microns, doping concentration NS.1015 atoms/cm3. The base (22) is of thickness 0.4 micron and doping concentration N.101 atoms/cm3 and emitter (24) of thickness 0.2 microns and doping concentration P+ 1021 atoms/cm3. Insulating walls (6 and 8), islands (4) and the connection layer (16) with an auxiliary wall (88) and contact layer are prvided. Substrate (26), buried layer (28), base (36) and emitter (32) complete the circuit. The doping concentrations of N type in the substrate (2) and the inversed collector (20) are chosen to be sufficiently low, so that the transistor conducts more rapidly than another rapid transistor of the same structure but with opposite types of conductivity.