| 摘要 |
A method for configurating thin layers, particularly in thin film circuits, wherein a layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration corresponding to the configuration of selected portions of such a mask, and a mask for use therein, as well as a method of making such mask, in which the mask is so constructed that, in use, the electron beam completely radiates the geometric shadow areas of the supporting elements on the thin film.
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