发明名称 METHOD OF CONTROL OF MECHANICAL VOLTAGES IN SILICON STRUCTURE FILM SiO2 - SUBSTRATE Si
摘要 FIELD: physics, measuring. ^ SUBSTANCE: invention concerns the electronic technics, in particular, to microelectronics, and can be used at manufacturing of IS crystals and discrete semiconductor devices. The essence of declared expedient of the control of mechanical voltages in structure film - substrate consists in formation between a film and a substrate of the intermediate stratum which is selectively etched through windows in a film of the round shape with formation in a backlash film - substrate of the interference figure reflecting quantity and a direction of a vector of mechanical voltages. ^ EFFECT: expansion of technical possibilities of method at expense of possibility of control of direction of vector of mechanical voltages. ^ 4 dwg
申请公布号 RU2345337(C2) 申请公布日期 2009.01.27
申请号 RU20060139606 申请日期 2006.11.07
申请人 PROIZVODSTVENNOE RESPUBLIKANSKOE UNITARNOE PREDPRIJATIE "ZAVOD POLUPROVODNIKOVYKH PRIBOROV" 发明人 SEN'KO SERGEJ FEDOROVICH;BELOUS ANATOLIJ IVANOVICH;PONOMAR' VLADIMIR NIKOLAEVICH
分类号 G01L1/24 主分类号 G01L1/24
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