| 摘要 |
1493648 Variable capacity diodes TOKYO SHIBAURA ELECTRIC CO Ltd 16 Dec 1975 [16 Dec 1974] 51482/75 Heading H1K A variable capacity diode assembly for operation at 30-300 MHz, comprises a semiconductor chip 7, Fig. 1, including at least three variable capacity diodes V 1 -V 4 formed in a semiconductor substrate 21, 22, Fig. 2, which is mounted on a grounding plate 6 and sealed within a package 10, external conductors 8 1 -8 4 for the diodes V 1 -V 4 , and ground conductors 6 1 -6 4 which alternate with the external conductors 8 1 -8 4 so as to separate them. The external conductors 8 1 -8 4 and the ground conductors 6 1 -6 4 are arranged symmetrically such that all but one of the ground conductors 6 4 extend from one side of the package 10 to form a single-in-line package, or alternatively, the conductors may extend symmetrically from opposite sides of the package 10 to form a dual-in-line package. The capacitance between an external conductor and an adjacent ground conductor is the same for all external conductors, and the sum of the capacitances between an external conductor and the adjacent ground conductors is the same for all external conductors. The diodes V 1 -V 4 are integrated in a P and B-doped Si substrate 21, 22 which is bonded to the ground plate 6 via a Si-Al eutectic junction 28 and gold plating 29, and the device is packaged in epoxy resin. |
