发明名称 |
Light activated thyristor capable of activation by intensity radiation |
摘要 |
The present invention pertains to a light activated thyristor which increases the current density of light-generated carriers by means of a low resistance path from an area of carrier generation in a base zone of a first conductivity type into a portion of an adjacent emitter zone of a second conductivity type. In one embodiment the low resistance path takes the form of an annular gate electrode affixed to the base zone and having a projection bordering the base-emitter PN junction. In another embodiment the low resistance path takes the form of a ballast segment disposed in the base zone, the ballast segment having an opening for funnelling the carriers to the base-emitter PN junction.
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申请公布号 |
US4060826(A) |
申请公布日期 |
1977.11.29 |
申请号 |
US19760710972 |
申请日期 |
1976.08.02 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
VOSS, PETER |
分类号 |
H01L29/74;H01L31/111;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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