| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS PROCESS |
| 摘要 |
PURPOSE:To reduce the propagation delay time of I<2>L by forming the emitter side of the I<2>L npn transistor as a high density impurity area at the interface between the emitter and base of the transistor. |
| 申请公布号 |
JPS52141588(A) |
申请公布日期 |
1977.11.25 |
| 申请号 |
JP19760058651 |
申请日期 |
1976.05.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FUJITA TSUTOMU |
| 分类号 |
H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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