发明名称 |
ULTRA HIGH VOLTAGE RESISTOR AND THE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE |
摘要 |
An insulator having a constant thickness is formed between a well region of a semiconductor substrate and polysilicon for a resistor by a series of manufacturing processes. Since the insulator has a durable structure against an applied high voltage, a resistor for a semiconductor device which can withstand an ultra high voltage without an increases in the size of a semiconductor substrate, can be manufactured. Also, a semiconductor device including the resistor can be manufactured. |
申请公布号 |
KR20160077356(A) |
申请公布日期 |
2016.07.04 |
申请号 |
KR20140186348 |
申请日期 |
2014.12.22 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KIM, KWANG IL;KIM, YOUNG BAE |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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