发明名称 ULTRA HIGH VOLTAGE RESISTOR AND THE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE
摘要 An insulator having a constant thickness is formed between a well region of a semiconductor substrate and polysilicon for a resistor by a series of manufacturing processes. Since the insulator has a durable structure against an applied high voltage, a resistor for a semiconductor device which can withstand an ultra high voltage without an increases in the size of a semiconductor substrate, can be manufactured. Also, a semiconductor device including the resistor can be manufactured.
申请公布号 KR20160077356(A) 申请公布日期 2016.07.04
申请号 KR20140186348 申请日期 2014.12.22
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM, KWANG IL;KIM, YOUNG BAE
分类号 H01L27/02 主分类号 H01L27/02
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