发明名称 Reducing resistance temp. coefft. of film resistance - by coating cermet film with resistance on insulator with protective insulator film
摘要 <p>Resistance temp. coefft. of film resistance consisting of an insulator substrate and a cement film resistance coating is reduced by applying a protective film (I) of insulator to surface of cermet film. (I) consists of metal oxide(s), e.g. SiO, Al2O3, ZrO2 or Ce oxide. Application of (I) can reduce resistance temp. coefft. from -200 to +50 ppm/degrees C. It can be applied by a cheaper process than used in spray-coating substrate with Ta nitride. The substrate may consist of glass or Al2O3 and cermet film of 60-40 wt. % Cr and 40-60 wt. % SiO. Thickness of cermet film may be 0.08-2 mu and thickness of (I) may be 0.03-1.5 mu.</p>
申请公布号 DE2719045(A1) 申请公布日期 1977.11.10
申请号 DE19772719045 申请日期 1977.04.28
申请人 NIPPON KOGAKU K.K. 发明人 MATSUURA,MASAAKI;KUMANO,SHIGEAKI
分类号 H01C7/00;H01C7/06;H01C17/06;H01C17/08;(IPC1-7):H01C7/00 主分类号 H01C7/00
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