| 发明名称 |
PRODUCTION OF SEMICONDUTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:The hFE of grounding of PNP transistors is improved by forming the emitter layer of lateral PNP transistors higher in impurity concentration and the base layer of vertical NPN transistors lower in impurity concentration. |
| 申请公布号 |
JPS52133759(A) |
申请公布日期 |
1977.11.09 |
| 申请号 |
JP19760050328 |
申请日期 |
1976.04.30 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NOGUCHI TERUO;HORIBA YASUTAKA;TANAKA TERUICHIROU;NAKANO TAKAO;KIJIMA KOUICHI |
| 分类号 |
H01L27/082;H01L21/331;H01L21/8226;H01L27/02;H01L29/73 |
主分类号 |
H01L27/082 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
