Semiconductor device

摘要

The invention relates to a photo-sensitive solid-state electronic device whose anode-cathode current is modified by photon induced changes in the electrical condition of a dielectric layer on the semiconductor body. The invention is primarily concerned with the nature of the photosensitive material used for the device which is chosen to cause charge injection into the dielectric layer. The semiconductor body may define a FET, an MIS or a CCD device and the photosensitive material is conveniently an optically active organic dyestuff.