| 发明名称 |
MANUFACTURING METHOD OF TRANSPARENT ELECTRODE |
| 摘要 |
PURPOSE:To obtain SnO2 nessa film having a predetermined thrickness even if the temperature distribution in a substrate may be uneven by adding hydrate such as SnCl4. Xh2O in a process forming SnO2 nessa film, in a CSD method for SNO2. |
| 申请公布号 |
JPS52131197(A) |
申请公布日期 |
1977.11.02 |
| 申请号 |
JP19760047718 |
申请日期 |
1976.04.28 |
| 申请人 |
HITACHI LTD |
发明人 |
AKOU SABUROU;SUDA TADASHI;INAO KIYOHISA |
| 分类号 |
H05B33/28;C03C17/245;C23C16/40;H01B13/00;H05B33/12;H05B33/26 |
主分类号 |
H05B33/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
