| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE:To avoid crack generated on a InP semiconductor crystal substrate by selecting value of x of a GaxIn1-xAs crystal layer grown on the crystal substrate as value of 0.41 to 0.47 slightly larger than glid constant of the crystal substrate.</p> |
| 申请公布号 |
JPS52127189(A) |
申请公布日期 |
1977.10.25 |
| 申请号 |
JP19760044283 |
申请日期 |
1976.04.19 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
NAGAI HARUO;NOGUCHI ETSUO |
| 分类号 |
H01L21/205;H01L21/208;H01L33/16;H01L33/30;H01L33/40 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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