FET data storage element with low driving voltages - uses overlapped gate electrodes and depends on avalanche effects in telephone exchanges

摘要

A field effect n-channel storage element is typically for use in storage units in telephone exchanges, it depends on avalanche or alternatively tunnelling effects and requires only low writing and erasing voltages. A source (S) and drain (D) both of N type semiconductor are grown in a P type substrate (P) and two gate electrodes (G1, G2) and an auxiliary layer (LK) divided into two parts (K1, K2) and separated by oxide layers of various thicknesses, are deposited on this. The device depends for its storage operation on avalanche or alternatively on Fowler Nordheim type tunnelling across the oxide layers between the slightly overlapped (L) electrodes.