发明名称 |
DEMPNINGSKRETS FOR FORSPENNINGSSTROM |
摘要 |
A potential offset is developed across a self-biased transistor responsive to applied input current. This offset potential has a decrement subtracted therefrom by a network comprising an intermediate transistor and a pair of resistors; this reduced potential provides the base-emitter potential for biasing the base-emitter junction of a transistor supplying output current between its emitter and collector electrodes. Very large current attenuation factors are obtainable with resistors having sufficiently low resistance as to be readily integrable in a monolithic integrated circuit. |
申请公布号 |
SE7613699(A) |
申请公布日期 |
1977.10.13 |
申请号 |
SE19760013699 |
申请日期 |
1976.12.07 |
申请人 |
* RCA * CORPORATION |
发明人 |
A A A * AMED |
分类号 |
H03F3/343;G01R19/165;G05F3/26;H03F3/34;H03F3/347;(IPC1-7):H03F3/04 |
主分类号 |
H03F3/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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