发明名称 DEMPNINGSKRETS FOR FORSPENNINGSSTROM
摘要 A potential offset is developed across a self-biased transistor responsive to applied input current. This offset potential has a decrement subtracted therefrom by a network comprising an intermediate transistor and a pair of resistors; this reduced potential provides the base-emitter potential for biasing the base-emitter junction of a transistor supplying output current between its emitter and collector electrodes. Very large current attenuation factors are obtainable with resistors having sufficiently low resistance as to be readily integrable in a monolithic integrated circuit.
申请公布号 SE7613699(A) 申请公布日期 1977.10.13
申请号 SE19760013699 申请日期 1976.12.07
申请人 * RCA * CORPORATION 发明人 A A A * AMED
分类号 H03F3/343;G01R19/165;G05F3/26;H03F3/34;H03F3/347;(IPC1-7):H03F3/04 主分类号 H03F3/343
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