| 摘要 |
<p>PURPOSE:To enable to obtain the flat cathode of with large area suiting for the electron beam exposure unit by forming the sheet of the point shaped emitter material on the semiconductor substrate and by performing the anode formation or the oxidation of the multi-layer insulating film of the regular pattern covered on top of it as a mask and by forming the accelerating electrode with the lift-off method with the use of it as a mask.</p> |
