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发明名称
PROCESS FOR PREPARING A SUBSTRATE FOR MOS DEVICES OF DIFFERENT THRESHOLDS
摘要
申请公布号
US4052229(A)
申请公布日期
1977.10.04
申请号
US19760700043
申请日期
1976.06.25
申请人
INTEL CORPORATION
发明人
PASHLEY, RICHARD D.
分类号
H01L21/033;H01L21/225;H01L21/8234;H01L27/088;(IPC1-7):H01L21/26;H01L29/78
主分类号
H01L21/033
代理机构
代理人
主权项
地址
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