| 摘要 |
A method of making a bipolar integrated circuit which requires neither an epitaxial layer nor a buried layer. The required doping of a semiconductor substrate, e.g., silicon, is obtained by a series of etching steps alternated with ion implantation steps of a selected impurity type, and heat treatment steps. The emitter and collector zones of a transistor are formed on sloping walls of adjacent troughs formed in a semiconductor substrate. The base zone of a transistor is formed on the confronting sloping wall of one of these troughs. Lead conductors are located in the troughs along sloping wall portions of the troughs.
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