| 摘要 |
<p>1484834 Semi-conductor devices ROCKWELL INTERNATIONAL CORP 11 March 1976 [16 June 1975] 09825/6 Heading H1K Complementary MOS silicon-on-sapphire devices are made by the following processing steps, not necessarily in the order given. (a) A plurality of N-type Si islands 11E, 11F, 11G are provided on a sapphire substrate 10, preferably by epitaxial deposition of a continuous layer followed by selective etching. (b) At least on island 11F is converted to P-type conductivity, preferably by B-ion implantation using a photoresist mask. (c) One island 11E is partially masked, preferably with silicon nitride on oxide, and the unmasked areas are converted to P-type, preferably by diffusion from a B-rich glass layer 20. (d) The assembly is heated to drive in the B from step (c) and to form oxide 35 on the exposed Si. (e) A layer 21 of silicon nitride is provided and is selectively removed to unmask portions of the island 11F while leaving the island 11E masked. (f) The unmasked portions of island 11F are converted to N-type, preferably by diffusion from a P- rich glass layer 23. (g) The assembly is heated to drive in the P from step (f) and to form oxide on the exposed Si of the island 11F. (h) Portions of the islands are exposed by selective etching. (i) Electrodes are provided. The steps may be carried out in the order given, with step (b) preceding step (a) or in the order (a), (c), (d), (b), (e)-(i). The structure shown includes a diode 102 in addition to the complementary MOS transistors 100, 101, no additional processing steps being necessary to make this possible.</p> |
