| 摘要 |
<p>PURPOSE:To improve efficiency with excellent reproduction by providing a P-type propagation layer from the N-type layer surface through the P-type layer in a light-emitting diode composed of Si doped N- and P-type Ga1-xAlxAs layers (0<=X<1) which are grown continuously on the N-type GaAs base in a liquid phase growth process.</p> |
