HIGH VOLTAGE SEMICONDUCTOR DEVICE,申请号JP19760019870-传众专利搜索

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发明名称	HIGH VOLTAGE SEMICONDUCTOR DEVICE
摘要	PURPOSE:To produce a semiconductor device with high voltage and high reliability with good yield, by means of forming polycrystal layer on the main surface of one side as specified, and insulation substance layer on the surface of side plane.
申请公布号	JPS52104072(A)	申请公布日期	1977.09.01
申请号	JP19760019870	申请日期	1976.02.27
申请人	HITACHI LTD	发明人	TANAKA TOMOYUKI
分类号	H01L29/73;H01L21/331;H01L29/06;H01L29/74	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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