发明名称 |
INSULATION GATE TYPE FIELD EFFECT TRANSISTOR |
摘要 |
PURPOSE:To obtain the MOSFET which can be integrated in high density by designing its structure that electrodes can be fixed on the same level as the each other gate electrodes of the electrodes in the IGFET are constructed in different production process. |
申请公布号 |
JPS52103975(A) |
申请公布日期 |
1977.08.31 |
申请号 |
JP19760020776 |
申请日期 |
1976.02.26 |
申请人 |
NIPPON ELECTRIC CO |
发明人 |
OOTA KUNIKAZU |
分类号 |
H01L21/8234;H01L27/088;H01L29/417;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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