发明名称 VAPOURIZED-METAL CLUSTER ION SOURCE AND IONIZED-CLUSTER BEAM DEPOSITION
摘要 <p>1483966 Coating by vacuum deposition SHARP K K 22 Oct 1975 [23 Oct 1974(2) 13 Jan 1975 (2) 29 March 1975 20 May 1975 15 July 1975 6 Aug 1975] 43459/75 Heading C7F In a vacuum vapour deposition coating process, the coating material is heated in a vessel with a restricted opening which is in communication with an enclosed evacuated region containing the substrate, so that the vapour pressure of the material is sufficiently high that the vapour passing to the evacuated region forms clusters or aggregates of the atoms or molecules, which are then ionized and accelerated towards the substrate. In the embodiment shown in Fig. 2 the coating material such as Cu, Pb, Si or ZnS, 14 is heated by resistive element 15 in crucible 5 located in vacuum chamber 1, the vapour pressure in the crucible being 10<SP>1-2</SP>-10 Torr and the vacuum in the chamber 1 being 10<SP>-3</SP> - 10<SP>-6</SP> Torr. The vapour is discharged as a jet through aperture 12 and ionized by a high voltage from source 9 applied between the crucible, positive, and the annular ion extractor electrode 6 negative. The ions are accelerated towards the substrate 19 by an electron stream produced from a heated electron emitting filament 10. The deposit may be regulated by an adjustable shutter 21. The substrate may be metal, stainless steel, semi-conductor, rock salt, plastics such as MYLAR (Trade Mark) and wood. Many different embodiments are described, the crucibles may have several apertures and they may also be located above the substrate.</p>
申请公布号 GB1483966(A) 申请公布日期 1977.08.24
申请号 GB19750043459 申请日期 1975.10.22
申请人 SHARP KK 发明人
分类号 C23C14/22;(IPC1-7):23C13/00 主分类号 C23C14/22
代理机构 代理人
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