| 摘要 |
An insulated gate field effect transistor having a self-aligned gate, reduced capacitance, and lower surface step heights is fabricated with the use of a silicon nitride layer which serves first as a diffusion mask, than as an oxidation barrier, and ultimately as a gate dielectric. In an alternate embodiment, lower threshold voltages are achieved by replacing the initial gate dielectric with a thinner dielectric having a reduced surface state density.
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