Passivating semiconductor drives with silicon nitride - using reaction gases in glow discharge in radial flow reactor

摘要

Substrates are coated in a plasma in radio-frequency (R.F.) reactors using radial gas flow without projection. A reaction gas is fed into an evacuated chamber to obtain laminar gas flow across the substrates in a glow discharge near the substrates. The gas contains SiH4, NH3, and an indert carrier gas, but without other reactive gases. The gas flow is pref. >1500 cm3/second with dynamic gas press. >800 (esp. 800-1100) mu the gas contg. 0.5-2.0% SiH4 with ratio SiH4/NH3 = 0.5-1.0 and the pref. carrier is Ar. The substrates are pref. heated in the reactor to 250-450 degrees C.