发明名称 PRODUCTION OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To reduce the parasitic capacity by electrode structure by forming an electrode on a first insulator film, then covering a second insulator film, making connecting electrodes thereon and ball-bonding lead wires.
申请公布号 JPS5298470(A) 申请公布日期 1977.08.18
申请号 JP19760015093 申请日期 1976.02.14
申请人 SONY CORP 发明人 TSUYUKI TADAHARU;KOBAYASHI MITSUHIKO;AKIYAMA KATSUHIKO
分类号 H01L21/60;H01L21/28 主分类号 H01L21/60
代理机构 代理人
主权项
地址