Vacuum vapour deposition of silicon - without the formation of spatter from a melt of silicon and a heavy metal and by using an electron beam

摘要

A thin film of Si on a substrate, by vacuum vapour deposition from a melt, is produced by heating a melt contg. Si and one or several of heavy metals such as Mo, W or Ta and using an electron beam. The proportion of Si in the melt is higher than required for the formation of a silicide of these metals and is pref. >67, esp. 87 at %. The melt is pref. composed of Si and Mo. Used for the prodn. of semiconductor elements and integrated circuits. Process avoids the formation of undesirable spatter of Si during evaporation.