| 摘要 |
1482103 Integrated circuits INTERNATIONAL BUSINESS MACHINES CORP 29 Oct 1974 [5 Nov 1973] 46676/74 Heading HIK Dielectric isolation between the components of an integrated circuit is provided by depositing a layer of silicon oxynitride SiO x N y on the surface of a Si body (e.g. comprising an N-type epitaxial layer 15 on a P-type substrate 10), opening an annular window therein, etching an annular groove 23 through the window and simultaneously oxidizing both the exposed Si and the SiO x N y to form a continuous SiO 2 coating including a surface part 24 and an isolation part 25. The refractive index (and hence the density) and the thickness of the SiO x N y layer are selected so as to obtain the desired final thickness for the oxide part 24. This is achieved by controlling the CO 2 :NH 3 or O 2 :NH 3 ratio in the deposition mixture with silane. As shown lateral component isolation is completed by a buried P<SP>+</SP> type region 12, but other configurations may render this unnecessary.
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