发明名称 STENCIL PROCESS FOR HIGH RESOLUTION PATTERN REPLICATION
摘要 <p>1481474 Molecular beam coating using a semi-conductor stencil TEXAS INSTRUMENTS Inc 17 June 1974 [18 June 1973] 26700/74 Heading C7F [Also in Division B6J] Replicated patterned thin films are produced on a substrate by fabricating a stencil from a monocrystalline wafer of semi-conductor so as to include a membrane area of stencil material opaque to molecular beam radiation but of reduced thickness relative to the remainder of said stencil and having at least one patterned opening therein, wherein the boundaries between each said opening and the membrane area of stencil material defining the periphery thereof lie substantially in planes perpendicular to the face of the stencil, and depositing material on said substrate from a molecular beam source of coating material through the patterned opening(s). Apparatus for carrying out the method comprises a molecular beam source, in an evacuated enclosure, means for supporting a substrate, a highresolution stencil between said source and substrate, X-Y positioning means for adjusting the substrate position relative to the stencil and source, fine adjustment alignment means for further adjusting the substrate &c., and control means for cyclically energizing said molecular beam source and adjustment means to provide repeated thin film deposits conforming to the patterned openings in the stencil. Manufacture of a surface wave delay line inter-digital transducer by coating Li niobate or quartz through a stencil with Al and Au in two stages is referred to, and various means of making the stencil using etching and/or epitaxial growth are described.</p>
申请公布号 GB1481474(A) 申请公布日期 1977.07.27
申请号 GB19740026700 申请日期 1974.06.17
申请人 TEXAS INSTR INC 发明人
分类号 H01L21/306;C23C14/04;C30B23/04;G03F1/20;H01L21/00;H01L21/84;(IPC1-7):23C13/02 主分类号 H01L21/306
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