发明名称 |
Read-only memory using complementary conductivity type insulated gate field effect transistors |
摘要 |
A read-only memory, comprising a decoder and a storage memory, wherein the decoder matrix and the storage memory matrix each comprises complementary metal oxide semiconductor transistors. Each column of the decoder matrix and each column of the storage memory matrix is connected to a single load or precharge transistor.
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申请公布号 |
US4037217(A) |
申请公布日期 |
1977.07.19 |
申请号 |
US19750612968 |
申请日期 |
1975.09.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SAVARESE, GIUSEPPE |
分类号 |
G11C17/12;(IPC1-7):G11C17/00;G11C11/40 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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