发明名称 |
Mfr. of mesa diodes - uses deposition and surface erosion to avoid deterioration resulting from thermocompression |
摘要 |
<p>The mfr. of Mesa type diodes overcomes deterioration due to thermo compression etc. The stages of mfr. include creating the basic mesa form on a material having a high heat conductivity such as copper or molybdenum or a low resistivity doped silicon material. The mesa form is regular across the surface, deposition in the hollows and surface erosion produces a plane parallel surface which is provided with a metal conducting layer over the active area. The support points form a continuous line around the axis of the principle mesa, the diode and supports forming a triangle whose centre coincides with that of the substrate.</p> |
申请公布号 |
FR2335953(A1) |
申请公布日期 |
1977.07.15 |
申请号 |
FR19750039181 |
申请日期 |
1975.12.19 |
申请人 |
THOMSON CSF |
发明人 |
RAYMOND HENRY ET ALAIN CHAPARD;CHAPARD ALAIN |
分类号 |
H01L21/48;H01L21/50;H01L21/60;H01L21/603;H01L23/492;H01L29/861;(IPC1-7):01L21/70;01L29/06 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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