发明名称 Mfr. of mesa diodes - uses deposition and surface erosion to avoid deterioration resulting from thermocompression
摘要 <p>The mfr. of Mesa type diodes overcomes deterioration due to thermo compression etc. The stages of mfr. include creating the basic mesa form on a material having a high heat conductivity such as copper or molybdenum or a low resistivity doped silicon material. The mesa form is regular across the surface, deposition in the hollows and surface erosion produces a plane parallel surface which is provided with a metal conducting layer over the active area. The support points form a continuous line around the axis of the principle mesa, the diode and supports forming a triangle whose centre coincides with that of the substrate.</p>
申请公布号 FR2335953(A1) 申请公布日期 1977.07.15
申请号 FR19750039181 申请日期 1975.12.19
申请人 THOMSON CSF 发明人 RAYMOND HENRY ET ALAIN CHAPARD;CHAPARD ALAIN
分类号 H01L21/48;H01L21/50;H01L21/60;H01L21/603;H01L23/492;H01L29/861;(IPC1-7):01L21/70;01L29/06 主分类号 H01L21/48
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