| 发明名称 |
INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:To reduce power consumption by so combining transistors that the composite structure of pnp and npn transistors operate in a high frequency operating range and a CMOS transistor operates in a low frequency range. |
| 申请公布号 |
JPS5279676(A) |
申请公布日期 |
1977.07.04 |
| 申请号 |
JP19750157091 |
申请日期 |
1975.12.25 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KATOU SHIYUUICHI;NAKANO TAKAO |
| 分类号 |
H01L21/8226;H01L21/331;H01L21/8238;H01L27/06;H01L27/082;H01L27/092;H01L29/73;H01L29/78;H03K19/0175;H03K19/094 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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