| 发明名称 |
PRODUCTION OF G*A**A*A* HETEROOJUNCTION SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To gain the good reproducible and good characteristic semiconductive LASER by using the oxidized membrane of GaAlAs as the mask, when the hetero-junction semiconductive is formed by embedding the GaAs layer in the GaAlAs layer. |
| 申请公布号 |
JPS5276890(A) |
申请公布日期 |
1977.06.28 |
| 申请号 |
JP19750152855 |
申请日期 |
1975.12.23 |
| 申请人 |
KOGYO GIJUTSUIN *JAPAN* |
发明人 |
KURIHARA HARUKI;YAMAMOTO MOTOYUKI |
| 分类号 |
H01L21/306;H01L21/208;H01S5/00 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 地址 |
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