| 摘要 |
<p>The surface insulation and/or the free semi-conductor surface is metallised with aluminium, titanium or polycrystalline silicon. The surface of the metallisation is oxidised pref. at is not >500 degrees C (200 degrees C) at 2-100 atmos for approx. 1 hr. Pref. the oxidising medium in air, O2, steam, N2O N2O3, NO2 or a non-etching liq. (water) esp. one contg. and O2 liberating substance esp. a peroxide such as H2O2 Ce (IV) ions and/or CrO4 ions and/or MnO4 ions contg. material.</p> |
