| 发明名称 |
Semiconductor device manufacture |
| 摘要 |
A method of directly etching an inverted-mesa semiconductor structure, wherein the mesa is first formed by shallow etching from the epitaxial layer surface and then undercut by preferentially etching the substrate more rapidly than the epitaxial layer.
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| 申请公布号 |
US4028140(A) |
申请公布日期 |
1977.06.07 |
| 申请号 |
US19750624726 |
申请日期 |
1975.10.22 |
| 申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
SUMMERS, JOHN GILBERT;PIERREPONT, MAURICE |
| 分类号 |
H01L21/306;H01L21/00;H01L21/3063;H01L29/00;H01L29/864;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/306 |
| 代理机构 |
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| 地址 |
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