发明名称 FORFARANDE VID TILLVERKNING AV EN HALVLEDARANORDNING
摘要 Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smooths out discontinuities caused by breaks in wire migration and effectively seals and isolates occluded particles of the impurity remaining in the semiconductor body. The cycle is also useful for providing large area doped regions that cannot be formed by wire migration due to constraints on wire direction.
申请公布号 SE7613233(A) 申请公布日期 1977.05.27
申请号 SE19760013233 申请日期 1976.11.25
申请人 GENERAL ELECTRIC COMPANY 发明人 CHANG M F;ANTHONY T R;CLINE H E
分类号 C30B13/10;H01L21/208;H01L21/22;H01L21/228;H01L21/24;H01L21/761;(IPC1-7):01L21/18 主分类号 C30B13/10
代理机构 代理人
主权项
地址