| 摘要 |
Submicron plasma trimming of a patterened resist material is combined with ion implantation techniques to achieve submicron control of lateral doping profiles. This makes possible the high-yield fabrication of, for example, bipolar microwave transitors of the self-aligned-emitter type. The basic technique can also be supplied to the fabrication of high performance insulted-gate field-effect transistors, junction-gate field-effect transistors and Schottky-barrier field-effect transistors. |
