发明名称 |
NONNVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE:A transistor having memory and address selecting gate is obtained by providing a control gate at a part of regions via first gate insulating film on the surfcce of channel regions and further providing a floating gate extended to the portions not covered with the control gate via second gate insulating film thereon. |
申请公布号 |
JPS5263684(A) |
申请公布日期 |
1977.05.26 |
申请号 |
JP19750139589 |
申请日期 |
1975.11.20 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
IIZUKA HISAKAZU |
分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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