发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To facilitate the formation of multilayer wirings by opening holes in the SiO2 film formed on a semiconductor substrate, forming a first wiring layer therein, then depositing an SiO2 film of nearly the same thickness as that of a silica film and wiring layer on the entire surface and forming thereon a second wiring layer after removing the raised portions. |
申请公布号 |
JPS5261981(A) |
申请公布日期 |
1977.05.21 |
申请号 |
JP19750138458 |
申请日期 |
1975.11.18 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KOTANI SHIGEO;MOTOJIMA MASATOSHI |
分类号 |
H05K3/46;H01L21/3205;H05K3/00 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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