| 发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a C-MOS free from electrode disconnection by simultaneously forming P and N channel regions whose formost surface is covered with an Si3N4 film on an N type Si substrate by using one mask and forming a P type ion implanted region under and near the N channel region. |
| 申请公布号 |
JPS5260079(A) |
申请公布日期 |
1977.05.18 |
| 申请号 |
JP19750135637 |
申请日期 |
1975.11.13 |
| 申请人 |
FUJITSU LTD |
发明人 |
NAKANO MOTOO |
| 分类号 |
H01L21/283;H01L21/76;H01L21/8238;H01L27/08;H01L27/092;H01L29/78 |
主分类号 |
H01L21/283 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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