Method of manufacturing semiconductor diodes for use in millimeter-wave circuits

摘要

A new method of semiconductor diode processing is described in which the resulting diode chips have an ohmic contact on four side faces of the chip. This is accomplished by cutting notches in the back side of a semiconductor slice before processing and by breaking the slice along the notches after fabricating the diodes on the front side of the slice. The new diode chip has a smaller series resistance than conventional millimeter-wave structures, and it can be readily bonded or soldered to millimeter-wave thin film circuits.