IMPURITY DOPING METHOD FOR GALLIUM ARSENIDE VAPOR PHASE GROWN CRYSTAL,申请号JP19750130678-传众专利搜索

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发明名称	IMPURITY DOPING METHOD FOR GALLIUM ARSENIDE VAPOR PHASE GROWN CRYSTAL
摘要
申请公布号	JPS5255377(A)	申请公布日期	1977.05.06
申请号	JP19750130678	申请日期	1975.10.30
申请人	NIPPON ELECTRIC CO	发明人	MIZUNO OSAMU
分类号	C30B25/02;C30B29/42;H01L21/205;H01L29/864	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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