SEMICONDUCTOR ETCHANT HAVING UNIFORM ETCH RATE

摘要

Thinning plate-shaped bodies of silicon or germanium, adhered to a glass-plate by chemically etching in an etchant comprising hydrofluoric acid and at least one oxidant, in which, prior to said etching, the etchant is given a content of silicon. This silicon may be added in several forms, for instance as silicon oxide in readily accessible form or by dissolving some elemental silicon. It is further possible for a similar process to use an etchant comprising the above etchant after first use. The method may be used in the manufacture of semiconductor devices.