发明名称 Para-benzoquinone diketal prepn. by anodic oxidn. - of benzene or substd. anisole in methanol contg. conductive salts
摘要 <p>Parent patent describes prepn. of p-benzoquinone diketals of formula (I) (where R is H, 1-4C alkyl or halogen by anodic oxidn. of benzene or anisole substd. in 0- or m-posn. by 1-4C alkyl or halogen. Electrochemical process takes place in MeOH contg. 5 wt.% water and 0.2-15 wt.%, w.r.t. electrolyte, of >=1 of NH4- or alkali fluoride, -perchlorate, -nitrite, -tetrafluoborate, -hexafluorosilicate, -hexafluorophosphate or p-toluene sulphonate, as conductive salt, and opt. of 0.5-10 wt.% base oxidised with a difficulty. Anodic oxidn. takes place at pH 7-10, using a graphite, Pt gp. metal or alloy or PbO2 anode, at -20 to +60 degrees C. In this addn. further conductive salts, opt. replacing those of parent patent, are used. Salts consist of >=1 alkali- and/or ammnium benzene sulphonate and/or >=1 quaternary ammonium- and/or phosphonium salt having formula AxB4-xZ+Y- (where A is 1-4C alkyl; B is Ph; x is integer 1-4; Z is N or P and Y is F or SO4Me). Quat. ammonium- and phosphonium cpds. have higher solubility than conductive salts of Parent Patent. They can be used in up to 30 wt. % concn., w.r.t. electrolyte. An example describes prepn. of p-benzoquinone tetramethyl diketal by electrolysis of benzene. Electrolyte contained NMe4F and MeOH.</p>
申请公布号 DE2547463(A1) 申请公布日期 1977.04.28
申请号 DE19752547463 申请日期 1975.10.23
申请人 HOECHST AG 发明人 PISTORIUS,RUDOLF,DIPL.-CHEM.DR.;MILLAUER,HANS,DIPL.-CHEM.DR.
分类号 C25B3/02;(IPC1-7):C25B3/02;C07C43/30 主分类号 C25B3/02
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