Charge transfer device suitable for optoelectronic detectors - using thin silicon substrate with insulation on both sides

摘要

The device uses direct charge coupling via a doped semiconductor substrate (1), with a connection terminal and a layer (2) of insuln. on one side provided with >=1 row of electrodes sepd. from each other by slots. The other side of the substrate (1) is provided with >=1 layer (3) of electrical insulation, 2 mu thick, fitted with >=1 electrode possessing a terminal accessible from outside. The substrate (1) is pref. a thin layer of Si 20 mu thick, layers (2,3) being SiO2 and all the electrodes Al or polycrystalline Si. The substrate may be n- or p-type.